Gallium Nitride Mosfet

1. Gallium Nitride Properties
2. Gallium Nitride Mosfet
3. Gan Transistor

Maximize power density and reliability with our portfolio of GaN power devices for every power level

Our family of gallium nitride (GaN)FETs with integrated gate drivers and GaN power devices offer the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors can switch much faster than silicon MOSFETs which offers the potential to achieve lower switching losses. 23 November 2016. Crystal orientation and gallium nitride trench MOSFET performance. University of California, Santa Barbara (UCSB) in the USA and Mitsubishi Chemical Corp in Japan have developed gallium nitride (GaN) trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with different orientations with respect to the crystal structure Chirag Gupta et al, Appl. The Gallium Nitride Power MOSFETS, are the unique technology design advantage of AGD Productions, and are the key to the reference level performance of all AGD amplifiers. With the seamless ability to drive any load, “THE AUDION” can deliver an unmatched sonic experience that only SET designs have been able to provide so far.

Our family of gallium nitride (GaN)FETs with integrated gate drivers and GaN power devices offer the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors can switch much faster than silicon MOSFETs which offers the potential to achieve lower switching losses. Our GaN transistors are being adopted for a wide range of applications from telecommunications, servers, motor drives, laptop adapters and on-board chargers for electric vehicles.

Revolutionizing the power engineering world

GaN’s inherent lower gate and output capacitance enables a MHz switching frequency operation which reduces gate and switching losses to increase efficiency.

Twice the speed, half the losses

GaN’s integrated driver enables switching speeds of >150 V/ns, resulting in half the losses compared to discrete GaN FETs. This, combined with our low-inductance package, delivers clean switching and minimal ringing in every power application.

Lifetime reliability

TI GaN-on-silicon process utilizes our 100% internal manufacturing facilities for fabrication, assembly and test, thus leveraging internally-owned capacity and maximized product quality.

Power management is at the center of enabling the continued integration of electronics in our lives. For decades, TI has been at the forefront of developing new process, packaging and circuit-design technologies to deliver the best power devices for your design. Check out our featured GaN devices below, designed to help you address power density.

GaN FETs with integrated driver & protection for power density

GaN FETs have inherently superior performance over traditional silicon FETs, which is enabling engineers to push the boundary in power designs and reach new levels of power density and efficiency. From consumer applications such as AC/DC power supplies all the way up to multi-kW, three-phase converters – GaN is reducing the weight, size and cost of these power designs while also reducing energy consumption. GaN’s high-speed switching is changing the way power systems look today, enabling market trends such as ultra-thin power supplies, motor drive integrated robotics and achieving >200% more power density in next-generation datacenters and 5G rectifiers.

LMG3410R070

600-V 70-mΩ GaN with integrated driver and protection

LMG3422R050

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

LMG3422R030

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Featured gallium nitride (GaN) reference designs

98.7%-efficient 1 MHz CrM GaN PFC reference design

This PFC design offers 270W/in^3 power density and 98.7% peak efficiency while switching at 1 MHz. The 2-stage interleaved 1.6 kW design is ideal for many space constrained applications such as server, telecom and industrial power supplies.

Gallium Nitride Properties

48V/10A 3-phase GaN inverter design for high-speed motor drive

This design enables low voltage, 100-kHz drives and low inductance brushless motors to minimize losses, torque ripple in the motor and achieve efficiency of 98.5%.

200V AC three-phase GaN inverter design for servo drive

This 98%-efficient design for driving 200-V AC servo motors up to 2 kW, enables low-inductance motor drive with minimum current ripple for fine position controlled applications.

Automotive GaN

TI’s new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions, offering electric vehicles an extended battery range with increased system reliability at a lower design cost.

Our GaN FETs feature:

• A fast switching, 2.2-MHz integrated gate driver
• Twice the power density to achieve 99% efficiency
• A 59% reduction in the size of power magnetics compared to existing solutions

Gallium Nitride Mosfet

View the LMG3522R030-Q1 to learn more.

The most efficient & reliable GaN

TI's integrated approach to GaN offers ease of design with a compact single-chip solution, high efficiency as a result of optimized gate drive layout and high reliability with integrated overcurrent protection and 40 million hours of device reliability hours. With devices from 150-mΩ to 30-mΩ, we have a GaN solution for every application.

The AGD Vivace Monoblock, is the most advanced Hi-End Power Amplifier in the market.First to use the unique GaNTube™ technology with Gallium Nitride Power-Stage integrated in a Vacuum Tube. The Gallium nitride components are the key to the reference level performance of the AGD Vivace Monoblocks.
To achieve the highest-performance in audio reproduction, switching topologies must achieve nearly ideal switching waveforms, completely oscillation-free, to minimize distortion but most importantly, to preserve the harmonic content present in the original input signal and avoid the superimposition of any additional artifacts that alter the overall spectrum and the spatiality of the music reproduction.The Gallium Nitride power MOSFETS used in the GaNTubeTM power stage, simplifies this challenge through its ability to efficiently switch at much higher slew rates than any silicon based power MOSFET, with almost perfect (book-like) behavior and oscillation free switching.

Design Philosophy

With the seamless ability to drive any loudspeakers, 200W of power, 48,000µF of super audio grade capacitor reservoir, and the fastest slew-rate, the GaNTube™ Technology delivers the purest sonic experience.
Thanks to the Gallium-Nitride power stage intrinsic characteristics, the virtually stray-inductance free package, and a state of the art layout of the power module, the rise time and fall time of the Vivace's GaNTubeTM power stage are fully symmetrical at ~15ns. The output waveform at the switching node of the Gallium-Nitride power stage (pre-LC filter) is completely oscillation free even with a slew rate of 3700V/µs!

This oscilloscope snap-shot of the output power stage half-bridge switching node, is a dramatic evidence of the tremendous difference in switching speed between the Gallium Nitride Power MOSFET and the state of the art Silicon Power MOSFET equivalent.

The combination of low noise design technique implemented and the best practice for the internal board layout, the RF quality BNC connectors for the analog signals, are the key contributors of the excellent noise floor of the Vivace Monoblocks and extremely low distortion.

Gan Transistor

Main Features & Characteristics:

• Single Channel Class-D Amplifier
• Fully integrated in Vacuum Tube Enclosure
• Gallium Nitride MOSFET Power Stage
• IRS20957 Controller PWM IC
• Up to 200W 4Ω
• Up to 768KHz PWM.
• ≥ 94% Efficiency
• ≤ -120db
• OVT, OVC and DC protection

AGD Vivace GaN

The amps can be feed balanced or through RCA-inputs. An input selector, toogles the signal input feed from the connectors to the analog board. The power inlet is high-grade quality with medical standard EMI filter and with voltage selector for operation Speaker terminals are simply made, effective and can handle cables of large cross sections.

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Technical Specs

PARAMETERS
• Nominal Output Power at 0.01% THD+N, 20Hz÷20KHz, 8Ω
• THD+N 10W/1KHz
• Maximum Output Power at 0.1% THD+N, 1KHz, , 4Ω
• Bandwidth ±3dB
• Efficiency%
• Output Noise (A-weighted)
• PWM Frequency
• Dynamic Range
• Dimension
• Weight
• Input Voltage

GaNTube^TM
• 100W
• <0.005%
• 200W
• 5Hz÷100KHz
• >94%
• ≤ 45μV
• Up to 768KHz
• 120dB
• 11'x11'x5' (279x279x127mm)
• 22lbs (10kg)
• 110-240V (user selectable)